DatasheetsPDF.com

2SD214

Part Number	2SD214
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD214 DESCRIPTION ·Excellent Safe Operating Area ·Collector-E...
Datasheet	2SD214 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD214 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.
) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature ...

Similar Datasheet

2SD200 NPN Transistor - INCHANGE
2SD200 SILICON POWER TRANSISTOR - SavantIC
2SD2000 Silicon NPN Transistor - Panasonic Semiconductor
2SD2000 SILICON POWER TRANSISTOR - SavantIC
2SD2000 NPN Transistor - INCHANGE
2SD2001 NPN Transistor - INCHANGE
2SD2005 NPN Transistor - ROHM
2SD2006 NPN Transistor - Rohm
2SD2008 1.2W PACKAGE POWER TRANSISTOR - Rohm
2SD2009 NPN Transistor - ROHM

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)