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2SD730

INCHANGE
Part Number 2SD730
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION ·Collector-Emitter Breakdown V...
Datasheet PDF File 2SD730 PDF File

2SD730
2SD730

Overview
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 12A ·Low Collector Saturation Voltage- : VCE (sat)= 3.
0V(Max.
)@ IC= 20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulator ·General purpose amplifier amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.
0 V IC Collector Current -Continuous 25 A ICP Collecto...


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