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2SD1139

INCHANGE
Part Number 2SD1139
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet PDF File 2SD1139 PDF File

2SD1139
2SD1139

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.
8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.
5A; IB= 0.
05A 3.
0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 4V 1.
0 V ICBO Collector Cutoff Current VCE= 200V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 50mA; VCE= 4V 60 320 hFE-2 DC Current Gain IC= 500mA; VCE= 10V 60 COB Output Capacitance IE= 0; VCB= 100V; ftest= 1.
0MHz 20 pF  hFE-1 Classifications B C D 60-120 100-200 160-320 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1139 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our ...


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