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FDS6673BZ-F085

ON Semiconductor
Part Number FDS6673BZ-F085
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Sep 30, 2020
Detailed Description FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General...
Datasheet PDF File FDS6673BZ-F085 PDF File

FDS6673BZ-F085
FDS6673BZ-F085

Overview
FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET -30V, -14.
5A, 7.
8mΩ General Description Features „ Max rDS(on) = 7.
8mΩ, VGS = -10V, ID = -14.
5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state „ Max rDS(on) = 12mΩ, VGS = -4.
5V, ID = -12A „ Extended VGS range (-25V) for battery applications resistance.
„ HBM ESD protection level of 6.
5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
„ High performance trench technology for extremely low r...


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