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2SD2022

Part Number	2SD2022
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2022 DESCRIPTION ·High DC Current Gain- : hFE = ...
Datasheet	2SD2022 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2022 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency amplifications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ ...

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