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2SD2051

INCHANGE
Part Number 2SD2051
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2051 DESCRIPTION ·High DC Current Gain : hFE= 40...
Datasheet PDF File 2SD2051 PDF File

2SD2051
2SD2051

Overview
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2051 DESCRIPTION ·High DC Current Gain : hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.
5V(Max.
)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low-frequency amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=2...


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