DatasheetsPDF.com

2SD2055

Part Number	2SD2055
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055 DESCRIPTION ·High DC Current Gain - : hFE =20(Min)@ IC...
Datasheet	2SD2055 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2055 DESCRIPTION ·High DC Current Gain - : hFE =20(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 IB Base Current 6 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Stora...

Similar Datasheet

2SD200 NPN Transistor - INCHANGE
2SD200 SILICON POWER TRANSISTOR - SavantIC
2SD2000 Silicon NPN Transistor - Panasonic Semiconductor
2SD2000 SILICON POWER TRANSISTOR - SavantIC
2SD2000 NPN Transistor - INCHANGE
2SD2001 NPN Transistor - INCHANGE
2SD2005 NPN Transistor - ROHM
2SD2006 NPN Transistor - Rohm
2SD2008 1.2W PACKAGE POWER TRANSISTOR - Rohm
2SD2009 NPN Transistor - ROHM

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)