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BD678A

Part Number	BD678A
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Cur...
Datasheet	BD678A PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temp...

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