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TTD1409B

INCHANGE
Part Number TTD1409B
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 30, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown ...
Datasheet PDF File TTD1409B PDF File

TTD1409B
TTD1409B

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min) ·High DC Current Gain— : hFE = 600(Min) @ IC= 2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use high-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1 A 2 W 25 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.
0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.
5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 20 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.
0 mA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 600 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 100 COB Output Capacitance IE=0;VCB= 50V,ftest= 1MHz 35 pF Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= IB2= 0.
04A; RL= 25Ω; VCC≈ 100V Duty Cycle≤1% 1 μs 8 μs 5 μs isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B NOTICE： ISC reserves the rights to make changes of the content herein th...


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