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2SK3798

Part Number	2SK3798
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 30, 2020
Detailed Description	isc N-Channel MOSFET Transistor 2SK3798，I2SK3798 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.5Ω. ·Enhancemen...
Datasheet	2SK3798 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK3798，I2SK3798 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.
5Ω.
·Enhancement mode: Vth = 2.
0 to4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth...

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