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FMV09N70E

INCHANGE
Part Number FMV09N70E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 30, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·drain-source on-resistance: RDS(on) ≤ 1.4Ω (max) ·Fast Switching Speed ·100% ...
Datasheet PDF File FMV09N70E PDF File

FMV09N70E
FMV09N70E

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·drain-source on-resistance: RDS(on) ≤ 1.
4Ω (max) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching regulators ·UPS (Uninterruptible Power Supply) ·DC-DC converters INCHANGE Semiconductor FMV09N70E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 85 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTIC...


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