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IIPA65R150CFD

Part Number	IIPA65R150CFD
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 30, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IIPA65R150CFD DESCRIPT ·Low Drain-Source On-Resistance : RDS(on...
Datasheet	IIPA65R150CFD PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IIPA65R150CFD DESCRIPT ·Low Drain-Source On-Resistance : RDS(on) <0.
15Ω(Max) ·Drain Current ID=22A@ TC=25℃ ·New technology for high voltage device ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 22 A IdM Pulsed drain current 72 A Ptot Total Dissipation@TC=25℃ 34.
7 W Tj Max.
Operating Junction T...

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IIPA65R150CFD N-Channel MOSFET - INCHANGE

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