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IPP023NE7N3

INCHANGE
Part Number IPP023NE7N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 30, 2020
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 ·FEATURES ·Static drain-source on-resis...
Datasheet PDF File IPP023NE7N3 PDF File

IPP023NE7N3
IPP023NE7N3

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.
3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 300 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·T...


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