DatasheetsPDF.com

IPP126N10N3

Infineon
Part Number IPP126N10N3
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPP126N10N3 PDF File

IPP126N10N3
IPP126N10N3

Overview
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.
3 mΩ 58 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package Marking PG-TO220-3 126N10N PG-TO263-3 123N10N PG-TO262-3 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=46 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic ca...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)