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IPI126N10N3

Infineon
Part Number IPI126N10N3
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPI126N10N3 PDF File

IPI126N10N3
IPI126N10N3

Overview
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.
3 mΩ 58 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package Marking PG-TO220-3 126N10N PG-TO263-3 123N10N PG-TO262-3 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=46 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 58 42 232 70 ±20 94 -55 .
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175 55/175/56 1)J-STD20 and JESD22 2) See figure 3 Unit A mJ V W °C Rev.
2.
3 page 1 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area3) - - 1.
6 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA 100 V GS(th) V DS=V GS, I D=46 µA 2 I DSS V DS=100 V, V GS=0 V, T j=25 °C - V DS=100 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - R DS(on) V GS=10 V, I D=46 A, TO 220, TO 262 - V GS=6 V, I D=23 A, - TO 220, TO 262 V GS=10 V...


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