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IPD200N15N3

Infineon
Part Number IPD200N15N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 2, 2020
Detailed Description IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level •...
Datasheet PDF File IPD200N15N3 PDF File

IPD200N15N3
IPD200N15N3

Overview
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 Marking 200N15N 200N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO262-3 200N15N PG-TO220-3 200N15N Value Unit Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=50 A, R GS=25 W Reverse diode dv /dt dv /dt I D=50 A, V DS=120 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 50 40 200 170 6 ±20 150 -55 .
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175 55/175/56 A mJ kV/µs V W °C Rev.
2.
07 page 1 2014-01-09 IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient R thJA minimal footprint - 6 cm2 cooling area3) - - 1 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.
1 -V 4 1 µA Gate-source leakage current V DS=120 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - 1...


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