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IPI200N25N3

Infineon
Part Number IPI200N25N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 2, 2020
Detailed Description IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPI200N25N3 PDF File

IPI200N25N3
IPI200N25N3

Overview
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=47 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC ...


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