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IPB26CN10NG

Infineon
Part Number IPB26CN10NG
Manufacturer Infineon
Description Power-Transistor
Published Oct 2, 2020
Detailed Description IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Exc...
Datasheet PDF File IPB26CN10NG PDF File

IPB26CN10NG
IPB26CN10NG

Overview
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 Marking 26CN10N 25CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse E AS I D=35 A, R GS=25 W Reverse diode dv /dt dv /dt I D=35 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.
01 for Vgs<-5V PG-TO220-3 26CN10N Value 35 25 140 65 6 ±20 71 -55 .
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175 55/175/56 Unit A mJ kV/µs V W °C Rev.
1.
09 page 1 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - R thJA minimal footprint - ambient (TO220, TO262, TO263) 6 cm2 cooling area4) - Thermal resistance, junction ambient (TO252, TO251) minimal footprint - 6 cm2 cooling area4) - - 2.
1 K/W - 62 - 40 - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - Gate threshold voltage V GS(th) V DS=V GS, I D=39 µA 2 3...


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