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IPB600N25N3

Infineon
Part Number IPB600N25N3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga...
Datasheet PDF File IPB600N25N3 PDF File

IPB600N25N3
IPB600N25N3

Overview
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 60 mW 25 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Package Marking PG-TO263-3 600N25N PG-TO220-3 600N25N PG-TO262-3 600N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=25 A, R GS=25 W dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 25 18 100 210 10 ±20 136 -55 .
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175 55/175/56 Unit A mJ kV/µs V W °C Rev.
2.
3 page 1 2011-07-14 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient R thJA minimal footprint - 6 cm2 cooling area3) - - 1.
1 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 250 - Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.
1 -V 4 1 µA Gate-source leakage current V DS=200 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - 10 100 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=25 A - 51 60 mW Gate resistance Transco...


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