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IPI041N12N3

Infineon
Part Number IPI041N12N3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
Datasheet PDF File IPI041N12N3 PDF File

IPI041N12N3
IPI041N12N3

Overview
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.
8 mW 120 A Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package Marking PG-TO263-3 038N12N PG-TO262-3 041N12N PG-TO220-3 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous d...


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