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IPP060N06N

INCHANGE
Part Number IPP060N06N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resist...
Datasheet PDF File IPP060N06N PDF File

IPP060N06N
IPP060N06N

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THER...


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