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IPP076N12N3

Infineon
Part Number IPP076N12N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 2, 2020
Detailed Description IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R ...
Datasheet PDF File IPP076N12N3 PDF File

IPP076N12N3
IPP076N12N3

Overview
IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.
6 mW 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI076N12N3 G IPP076N12N3 G Package Marking PG-TO262-3 076N12N PG-TO220-3 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) ...


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