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IPW50R280CE

INCHANGE
Part Number IPW50R280CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R280CE IIPW50R280CE ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPW50R280CE PDF File

IPW50R280CE
IPW50R280CE

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R280CE IIPW50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
28Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18.
1 IDM Drain Current-Single Pulsed 42.
9 PD Total Dissipation @TC=25℃ 119 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-t...


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