DatasheetsPDF.com

IPW50R350CP

INCHANGE
Part Number IPW50R350CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R350CP IIPW50R350CP ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPW50R350CP PDF File

IPW50R350CP
IPW50R350CP

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R350CP IIPW50R350CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤350mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 89 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)