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IRF200P223

INCHANGE
Part Number IRF200P223
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ·FEATURES ·Static drain-source on-resista...
Datasheet PDF File IRF200P223 PDF File

IRF200P223
IRF200P223

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11.
5mΩ ·Enhancement mode: Vth =2.
0 to 4.
0 V (VDS=VGS, ID=270μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 313 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
48 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=270μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=60A IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=160V; VGS= 0V VSD Diode forward voltage IS=60A, VGS = 0V MIN TYP MAX UNIT 200 V 2.
0 4.
0 V 11.
5 mΩ 0.
1 μA 1.
0 μA 1.
2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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