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TK3R1A04PL

INCHANGE
Part Number TK3R1A04PL
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3R1A04PL，ITK3R1A04PL ·FEATURES ·Low drain-source on-resistance...
Datasheet PDF File TK3R1A04PL PDF File

TK3R1A04PL
TK3R1A04PL

Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK3R1A04PL，ITK3R1A04PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.
5mΩ (typ.
) (VGS = 10 V) ·Enhancement mode: Vth = 1.
4 to 2.
4V (VDS = 10 V, ID=0.
5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 82 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 36 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ...


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