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TK5A60W5

INCHANGE
Part Number TK5A60W5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60W5，ITK5A60W5 ·FEATURES ·Low drain-source on-resistance: RD...
Datasheet PDF File TK5A60W5 PDF File

TK5A60W5
TK5A60W5

Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60W5，ITK5A60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
95Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.
5V (VDS = 10 V, ID=0.
23mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.
5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 30 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.
17 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor INCHANGE Semiconduc...


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