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TK5Q60W

INCHANGE
Part Number TK5Q60W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5Q60W，ITK5Q60W ·FEATURES ·Low drain-source on-resistance: RDS...
Datasheet PDF File TK5Q60W PDF File

TK5Q60W
TK5Q60W

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5Q60W，ITK5Q60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤900mΩ.
·Enhancement mode: Vth =2.
7 to 3.
7V (VDS = 10 V, ID=0.
27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5.
4 IDM Drain Current-Single Pulsed 21.
6 PD Total Dissipation @TC=25℃ 60 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.
09 125 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5Q60W，ITK5Q60W ELECTRIC...


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