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TK10E80W

INCHANGE
Part Number TK10E80W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E80W，ITK10E80W ·FEATURES ·Low drain-source on-resistance: R...
Datasheet PDF File TK10E80W PDF File

TK10E80W
TK10E80W

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E80W，ITK10E80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
55Ω.
·Enhancement mode: Vth =3.
0 to 4.
0V (VDS = 10 V, ID=0.
45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.
5 IDM Drain Current-Single Pulsed 38 PD Total Dissipation @TC=25℃ 130 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER...


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