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IPB60R125CP

INCHANGE
Part Number IPB60R125CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor IPB60R125CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet PDF File IPB60R125CP PDF File

IPB60R125CP
IPB60R125CP


Overview
Isc N-Channel MOSFET Transistor IPB60R125CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 25 16 82 PD Total Dissipation @TC=25℃ 208 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
6 62 UNIT ℃/W ℃/W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IPB60R125CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.
25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1.
1mA 2.
5 3.
5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=16A 110 125 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS=0V Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃ Diode forward voltage ISD=16A, VGS = 0 V ±0.
1 μA 2 250 μA 0.
9 1.
2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products...



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