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IPB65R310CFD

INCHANGE
Part Number IPB65R310CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor IPB65R310CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate cha...
Datasheet PDF File IPB65R310CFD PDF File

IPB65R310CFD
IPB65R310CFD

Overview
Isc N-Channel MOSFET Transistor IPB65R310CFD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 11.
4 7.
2 34.
4 PD Total Dissipation @TC=25℃ 104.
2 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
2 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IPB65R310CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMB...


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