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IPB067N08N3

INCHANGE
Part Number IPB067N08N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor IPB067N08N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet PDF File IPB067N08N3 PDF File

IPB067N08N3
IPB067N08N3


Overview
Isc N-Channel MOSFET Transistor IPB067N08N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 72 320 PD Total Dissipation @TC=25℃ 136 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
1 40 UNIT ℃/W ℃/W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.
073mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=73A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=80V; VGS= 0V;Tj=25℃ VDS=80V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=73A, VGS = 0 Vs IPB067N08N3 MIN TYP MAX UNIT 80 V 2.
0 3.
5 V 5.
5 6.
7 mΩ ±0.
1 μA 1 100 μA 1.
0 1.
2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our product...



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