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IPB79CN10NG

INCHANGE
Part Number IPB79CN10NG
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 5, 2020
Detailed Description Isc N-Channel MOSFET Transistor IPB79CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet PDF File IPB79CN10NG PDF File

IPB79CN10NG
IPB79CN10NG

Overview
Isc N-Channel MOSFET Transistor IPB79CN10NG ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 13 9 52 PD Total Dissipation @TC=25℃ 31 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.
9 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


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