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IPU60R2K1CE

INCHANGE
Part Number IPU60R2K1CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 6, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch...
Datasheet PDF File IPU60R2K1CE PDF File

IPU60R2K1CE
IPU60R2K1CE

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.
7 IDM Drain Current-Single Pulsed 6 PD Total Dissipation 38 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
26 62 UNIT ℃/W ℃/W IPU60R2K1CE isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPU60R2K1CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER...


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