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IRF100S201

INCHANGE
Part Number IRF100S201
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 6, 2020
Detailed Description Isc N-Channel MOSFET Transistor IRF100S201 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charg...
Datasheet PDF File IRF100S201 PDF File

IRF100S201
IRF100S201

Overview
Isc N-Channel MOSFET Transistor IRF100S201 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 192 136 690 PD Total Dissipation @TC=25℃ 441 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
34 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.
25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.
25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=115A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=100V; VGS= 0V;Tj=25℃ VDS=80V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=115A, VGS = 0 V IRF100S201 MIN TYP MAX UNIT 100 V 2.
0 4.
0 V 3.
5 4.
2 mΩ ±0.
1 μA 20 250 μA 1.
3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our prod...


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