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IPF135N03L

Infineon
Part Number IPF135N03L
Manufacturer Infineon
Description Power-Transistor
Published Oct 6, 2020
Detailed Description Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • ...
Datasheet PDF File IPF135N03L PDF File

IPF135N03L
IPF135N03L

Overview
Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant IPD135N03L G IPS135N03L G IPF135N03L G IPU135N03L G Product Summary V DS R DS(on),max ID 30 V 13.
5 mΩ 30 A Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G Package Marking PG-TO252-3-11 135N03L PG-TO252-3-23 135N03L PG-TO251-3-11 135N03L PG-TO251-3-21 135N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev.
1.
0 ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=10 A, R GS=25 Ω I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C page 1 Value 30 26 30 21 210 30 20 6 ±20 Unit A mJ kV/µs V 2006-10-23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPD135N03L G IPS135N03L G IPF135N03L G IPU135N03L G Value Unit 31 W -55 .
.
.
175 °C 55/175/56 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - SMD version, device on PCB R thJA minimal footprint - 6 cm² cooling area4) - - 4.
9 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.
2 Zero gate voltage drain c...


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