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IPD110N12N3

Infineon
Part Number IPD110N12N3
Manufacturer Infineon
Description MOSFET
Published Oct 6, 2020
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD...
Datasheet PDF File IPD110N12N3 PDF File

IPD110N12N3
IPD110N12N3

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.
2.
4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen free according to IEC61249-2-21 * • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G IPD110N12N3 G IPS110N12N3 G 120 V 11 mΩ 75 A Package PG...


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