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IPS110N12N3

Infineon
Part Number IPS110N12N3
Manufacturer Infineon
Description MOSFET
Published Oct 6, 2020
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD...
Datasheet PDF File IPS110N12N3 PDF File

IPS110N12N3
IPS110N12N3

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.
2.
4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen free according to IEC61249-2-21 * • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G IPD110N12N3 G IPS110N12N3 G 120 V 11 mΩ 75 A Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse Gate source voltage3) E AS V GS I D=75 A, R GS=25 Ω P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.
01 for Vgs<-5V * Except package TO251-3 Rev.
2.
4 page 1 Value Unit 75 A 54 300 120 mJ ±20 V 136 W -55 .
.
.
175 °C 55/175/56 2015-06-24 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area4) IPD110N12N3 G IPS110N12N3 G min.
Values typ.
Unit max.
- - 1.
1 K/W - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 120 - Gate threshold voltage V GS(th) V DS=V GS, I D=83 µA 2 3 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.
1 -V 4 1 µA Gate-source leakage current V DS=100 V, V GS=0 V, T j=12...


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