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IXFH56N30X3

IXYS
Part Number IXFH56N30X3
Manufacturer IXYS
Description Power MOSFET
Published Oct 7, 2020
Detailed Description X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA56N30X3 IXFP56N30X3 IXFH56N30X3 D G S ...
Datasheet PDF File IXFH56N30X3 PDF File

IXFH56N30X3
IXFH56N30X3

Overview
X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA56N30X3 IXFP56N30X3 IXFH56N30X3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 300 V 300 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 56 112 28 700 50 320 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-220 & TO-247) 1.
13 / 10 N/lb Nm/lb.
in TO-263 TO-220 TO-247 2.
5 g 3.
0 g 6.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.
5mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved Characteristic Values Min.
Typ.
Max.
300 V 2.
5 4.
5 V 100 nA 5 A 500 A 21 27 m VDSS = ID25 =  RDS(on) 300V 56A 27m TO-263 (IXFA) TO-220 (IXFP) G S D (Tab) G DS TO-247 (IXFH) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls DS100860C(11/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.
8 • VDSS td(on) tr td(off) tf Resistive...


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