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IXTX60N50L2

INCHANGE
Part Number IXTX60N50L2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% ...
Datasheet PDF File IXTX60N50L2 PDF File

IXTX60N50L2
IXTX60N50L2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 150 PD Total Dissipation 960 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
13 UNIT ℃/W IXTX60N50L2 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTX60N50L2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1.
0mA 500 ...


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