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MMD60R360P

INCHANGE
Part Number MMD60R360P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description isc N-Channel MOSFET Transistor MMD60R360P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·100% avalanche...
Datasheet PDF File MMD60R360P PDF File

MMD60R360P
MMD60R360P

Overview
isc N-Channel MOSFET Transistor MMD60R360P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
38Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.
5 UNIT ℃/W isc web...


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