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PHD55N03

Part Number	PHD55N03
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 7, 2020
Detailed Description	Isc N-Channel MOSFET Transistor PHD55N03 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·...
Datasheet	PHD55N03 PDF File

Overview

Isc N-Channel MOSFET Transistor PHD55N03 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 55 38 220 PD Total Dissipation @TC=25℃ 103 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Chan...

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