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PSMN130-200D

INCHANGE
Part Number PSMN130-200D
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description Isc N-Channel MOSFET Transistor PSMN130-200D ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate char...
Datasheet PDF File PSMN130-200D PDF File

PSMN130-200D
PSMN130-200D

Overview
Isc N-Channel MOSFET Transistor PSMN130-200D ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation @TC=25℃ 150 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-c...


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