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SiHD12N50E

INCHANGE
Part Number SiHD12N50E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge...
Datasheet PDF File SiHD12N50E PDF File

SiHD12N50E
SiHD12N50E

Overview
Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.
5 6.
6 21 PD Total Dissipation @TC=25℃ 114 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)...


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