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STD5NM50T4

INCHANGE
Part Number STD5NM50T4
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche ...
Datasheet PDF File STD5NM50T4 PDF File

STD5NM50T4
STD5NM50T4

Overview
isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.
5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 100 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.
25 UNIT ℃/W isc w...


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