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STP45N10F7

INCHANGE
Part Number STP45N10F7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 7, 2020
Detailed Description Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche ...
Datasheet PDF File STP45N10F7 PDF File

STP45N10F7
STP45N10F7

Overview
Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 60 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.
5 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor STP45N10F7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 100 V VGS(th) Gate Thr...


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