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TK39N60W

Part Number	TK39N60W
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 7, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resis...
Datasheet	TK39N60W PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 38.
8 IDM Drain Current-Single Pulsed 155 PD Total Dissipation 270 Tj Operating Junction Temperature -50~150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
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