R6024ENX
Nch 600V 24A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max. )
0. 165Ω
ID
±24A
TO-220FM
PD
74W
lFeatures
1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±24
A
±72
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive
IAS EAS*3 EAS*3
4. 1
A
497
mJ
0. 75
mJ
Power dissipation (Tc = 25°C)
PD
74
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
...