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2SK3591-01MR

Part Number	2SK3591-01MR
Manufacturer	Fuji Electric
Description	N-CHANNEL SILICON POWER MOSFET
Published	Oct 8, 2020
Detailed Description	2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown ...
Datasheet	2SK3591-01MR PDF File

Overview

2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 150 V VDSX *5 120 V Continuous drain current Pulsed drain current ID ID(puls] ±57 A ±228 A Equivalent circuit schematic Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 Maximum Avalanche Energy EAS *1 57 A 272.
5 mJ Drain(D) Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max.
power dissipation PD Ta=25°C Tc=25°C 2.
16 W 95 Gate(G) Operating and storage Tch +150 °C Source(S) temperature range Tstg -55 to +150 °C Isolation voltage VISO *6 2 kVrms *1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch <=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 150V *5 VGS=-30V *6 t=60sec f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V Tch=25°C Tch=125°C ID=20A VGS=10V ID=20A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=...

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2SK3591-01MR N-CHANNEL SILICON POWER MOSFET - Fuji Electric

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