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AOTF16N50

INCHANGE
Part Number AOTF16N50
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 8, 2020
Detailed Description isc N-Channel Mosfet Transistor AOTF16N50 ·FEATURES ·Drain Current ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V...
Datasheet PDF File AOTF16N50 PDF File

AOTF16N50
AOTF16N50

Overview
isc N-Channel Mosfet Transistor AOTF16N50 ·FEATURES ·Drain Current ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Low ON Resistance RDS(on) = 0.
37Ω(Max) ·Low leakage current ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Plused 64 A PD Power Dissipation 50 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 65 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERIST...


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